Dr. S.V.Jagadeesh Chandra
                                   Ph.D.
Professor,
Department of ECE,
Lakireddy Bali Reddy College of Engineering,
Mylavaram - 521 230.

ACADEMIC PROFILE:

  • Awarded Doctor of Philosophy ( Ph.D) degree in 2008 from Sri Venkateswara University.

  • Awarded Master Degree from Sri Venkateswara University in 2003.

    • EXPERIENCE:

  • At present working as a Professor , Department of Electronics and Communications, Lakireddy Bali Reddy College of Engineering from October, 2011.

  • Visiting Researcher, Institute for NanoScience, Nanotechnology and Nanofabrication, CENIMAT, FCT-UNL, University of New Lisbon, Portugal during May, 2012 to November, 2012.

  • Scientific Investigator, Institute for NanoScience, Nanotechnology and Nanofabrication, CENIMAT, FCT-UNL, University of New Lisbon, Portugal during March, 2011 to October, 2011.

  • Foreign Researcher in the School of Semiconductor and Chemical Engineering, Semiconductor Research Center, Chonbuk National University, Jeonju, Republic of Korea during March, 2009 to February, 2011.

  • Research Associate in Plasma Processing Laboratory, Department of Instrumentation, Indian Institute of Science, Bangalore during May,2008 to February,2009.

  • Assistant Professor in Sri Vidyaniketan Institutions, Tirupati from 2006 to 2008.

 

PRESENT RESEARCH WORK:

  • Fabrication of MOS stacks for memory devices and mixed high-k/Semiconductor stacks for biosensors.

 

  • Currently, I am handling RF magnetron sputtering (Aja International) system for deposition of mixed high-k materials and E-beam evaporation system for the deposition of top gate electrode after pattering with lift-off lithography.

    • Research Projects Sanctioned / Funds received from funding Agencies:

  • Brain Korea-21 (BK-21), Republic of Korea

    •    Project Title: Studies on Interface Engineering in between HfO2 and Ge stacks.

       Principle Investigators: Dr. S.V. Jagadeesh Chandra, Dr. Chel Jong Choi

       Scheme: BK21 Project

       Sanctioned Amount: USD 72000

       Duration: March 2009 to March 2011

       Sponsor: BK-21 and BIN Fusion Technology

  • FCT, Portugal

    •   Project Title: Label-free biosensor based on amorphous multicomponent semiconductors Ion Sensitive Field Effect Transistors (ISFET)

       Principle Investigator: Dr. S.V. Jagadeesh Chandra

       Research Advisor: Prof. Elvira Fortunato

       Scheme: FCT/ BPD

       Sanctioned Amount: Euro 65000

       Duration: 2011 to 2017

       Sponsor: Foundation for Cience and Technology, Portugal.

    Acting as a Mentor:

  • DST Project

    •    Project Title: Some Surface Studies on MEMS PZT Accelerometer Using Surface Profilometer, worth of Rs. 23,95000-00

    Research Areas:

  • Interface Engineering at high-k/semiconductor stacks
  • VLSI
  • Nanotechnology and Nanofabrication
  • Bio-sensors

    • Acting as Reviewer/Referee Journals:

  • Microelectronics Engineering
  • Materials Science and Engineering B
  • Materials Science and Semiconductor Physics
  • Journal of Materials Science and Materials in Electronics
  • Crystal Research and Technology

    • HANDS ON EXPERIENCE:

    • Had good experimental skills on the preparation of compound semiconductor thin films using different deposition techniques like
          • Dc &RF magnetron sputtering
          • Thermal evaporation
          • Activated reactive evaporation
          • Photo lithography
    • Adequate knowledge on thin film characterization techniques like

     

          • X-ray diffractometer
          • UV-Vis-NIR Spectrophotometer
          • SEM attached with X-ray analyzer
          • I-V and C-V characteristics of MOS devices
    • Adequate knowledge on the preparation of presentations and project proposals
    • Adequacy in –Origin, Excel

    PUBLICATIONS

    BOOK:

    • Investigations on magnetron sputtered tantalum oxide films S.V. Jagadeesh Chandra, S. Uthanna and G. Mohan Rao ISBN 978-3-8433-9422-2, LAP Lambert Academic Publishers, Germany (February 2011).


    PAPERS PUBLISHED:

    International  Journals:

    1. Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stack S.V. Jagadeesh Chandra, J.S. Kim, K.W. Moon and C.J. Choi Microelectronic Engineering 89 (2012) 76-79

    1. Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric M.C. Sekhar, P. Kondaiah, S.V. Jagadeesh Chandra, G. Mohan Rao and S. Uthanna Surface and Interface Analysis 44 (2012) 1299-1304

    1. Modulations in effective workfunction of platinum gate electrode in metal-oxide-semiconductor devices S.V.Jadeesh Chandra, E. Fortunato, R. Martins, C.J. Choi Thin Solid Films 520 (2012) 4556-4558

    1. Effect substrat bias voltage on the structure, electric and dielectric properties of TiO2 thin films by DC magnetron Sputtering. M. Chandra Sekhar, P. Kondaiah, S.V. Jagadeesh Chandra, G. Mohan Rao, and S. Uthanna Applied Surface Science 258 (2011) 1789-1796.

    1. E and structural properties of metal-oxide-semiconductor (MOS) devices with Pt/Ta2O5 gate stacks Lee H.K, Jagadeesh Chandra S.V, Shim K.H, Yoon J.W and Choi C.J IEICI Trans Electronic E94-C(5) 846-849

    1. Effect of Effect of annealing ambient on structural and electrical properties of Ge Metal-Oxide-Semiconductor capacitors with Pt gate electrode and HfO2 gate dielectric. S.V. Jagadeesh Chandra, M.Il Jeong, Y.C. Park, J.W. Yoon and C.J. Choi Materials Transaction, vol. 52 No. 1 (2011) 118-123.

    1. Structural and electrical properties of RF magnetron sputtered tantalum oxide fims S.V. Jagadeesh Chandra, D.S. Park, A. Guruva Reddy, Chel Jong Choi International Journal of Nano Science, vol. 4 & 5 (2011) 749-753.

    1. Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing S.V. Jagadeesh Chandra, C.J. Choi, S. Uthanna and G. Mohan Rao Materials Science in Semiconductor Processing, Vol. 13 (2010) 245-251.

    1. Effective metal workfunction of Pt gate electrode in Ge metal oxide semiconductor (MOS) device with HfO2 gate dielectric S.V. Jagadeesh Chandra, Mi-Ra Jeong, K.H. Shim, H.B. Hong, S.H. Lee and C.J. Choi Journal of The Electrochemical Society, Vol. 157 (5) (2010) H546-H550.

    1. Influence of substrate temperature on the structural, dielectric and optical properties of RF magnetron sputtered Ta2O5 films S Uthanna, S.V. Jagadeesh Chandra, G. Mohan Rao and J F Pierson IOP conference Series: Materials Science Engineering, Vo. 8 (2010) 012025(1-5).

    1. Platinum Silicided p-type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique R.J. Moon, M.I. Jeong, S.V. Jagadeesh Chandra, K.H. Shim, M. Jang, H.B. Hong, S.Y. Chang, and C.J. Choi Journal of The Electrochemical Society, vol. 156 (2009) H620.

    1. Thermal stability of high-k Er silicate gate dielectric formed by interfacial reaction between Er and SiO2 films S.Y. Chang, M.I. Jeong, S.V. Jagadeesh Chandra, Y.B. Lee, H.B. Hong, V.R. Reddy, and C.J. Choi Materials Science in Semiconductor Processing, vol. 11(4) (2008) 122-125.

    1. Effect of post deposition annealing on the structural and Electrical properties of dc magnetron sputtered Ta2O5 films S. Uthanna, S.V. Jagadeesh Chandra, and G. Mohan Rao Journal of Physics: Conference Series vol. 114 (2008) 012035 (1-6).

    1. Substrate bias voltage influenced structural, electrical and optical properties of dc magnetron sputtered Ta2O5 films S.V. Jagdeesh Chandra, M. Chandrasekhar, G.Mohan Rao and S. Uthanna Journal of Materials Science: Materials in Electronics, 20 (4) (2008) 295-300.

    1. Effect of substrate temperature on the structural, optical and electrical properties of dc magnetron sputtered tantalum oxide films S.V. Jagadeesh Chandra, G. Mohan Rao, and S. Uthanna Applied Surface Science, vol. 254 (2008) 1953-1960.
    2. Effect of post deposition annealing on the structural and Electrical properties of dc magnetron sputtered Ta2O5 films S.V. Jagadeesh Chandra, P. Sreedhara Reddy, G. Mohan Rao, and S. Uthanna Researh.Letters in Materials Science, Article ID 95307 (2007) 1-5.

    3. Growth and electrical characteristics of rf magnetron sputtered Ta2O5 films on Si S.V. Jagdeesh Chandra, P. Sreedhara Reddy, G. Mohan Rao and S. Uthanna Optoelectronics and Advanced Materials: Rapid Communications, vol. 1 (2007) 496-499.

    4. Heat treatment induced structural and optical properties of rf magnetron sputtered tantalum oxide films S.V. Jagadeesh Chandra, G. Mohan Rao, and S. Uthanna Crystal Research and Technology, vol. 42 (2007) 290-294.

    ACCEPTED:

    1. Substrate temperature influenced physical and electrical properties of DC magnetron sputtered (Ta2O5)0.85(TiO2)0.15 films M. Chandrasekhar, S.V. Jagadeesh Chandra, P. Kondaiah, E. Fortunato, R. Martins and S. Uthanna Materials Science and Engineering, IOP Conference Proceedings

    1. Post-deposition annealing influenced structural and electrical properties of Al/TiO2/Si gate capacitors S.V. Jagadeesh Chandra, P Kondaiah, G Mohan Rao, and S. Uthanna Superlattices and Microstructures

    2. Influence of oxygen partial pressure on the structural and electrical properties of DC magnetron sputtered ZrO2 films for MOS capacitors P. Kondaiah, E. Fortunato, R. Martins and S. Uthanna and S.V. Jagadeesh Chandra IEEE JOURNAL OF DISPLAY TECHNOLOGY

      3. National Journals:

      1. Effect of oxygen partial pressure on the structural and optical properties of rf magnetron sputtered tantalum oxide filmsS.V. Jagadeesh Chandra, P. Sreedhara Reddy, G. Mohan Rao, and S. Uthanna Instrument Society of India

      1. Characterization of bias magnetron sputtered tantalum oxide films for capacitors M. Chandra Sekhar, S.V. Jagadeesh Chandra and S. Uthanna Indian Journal of Pure & Applied Physics, 47 (2009) 49-53.

        PAPERS PRESENTED IN INTERNATIONAL CONFERENCES

        • Structural Properties and Sensing Performance of Thin Mixed High-k Sensing Layer- Based Electrolyte–Insulator–Semiconductor Stacks for pH Detection and Biosensing S.V. Jagadeesh Chandra, B. Rita, J.V. Pinto, L. Pereira, Rodrigo Martins, Elvira Fortunato IUMRS-ICA 2012, August 26 - 31, 2012, BEXCO, Busan, Korea.

        • Influence of oxygen partial pressure on the structural and electrical properties of DC magnetron sputtered ZrO2 films for MOS capacitors P. Kondaiah, E. Fortunato, R. Martins, S. Uthanna, S.V. Jagadeesh Chandra 8th International Thin Film Transistor Conference, GULBENKIAN, January 30-31, 2012, Lisbon, Portugal.

        • Variations in the  effective work function of Platinum gate electrode in Ge metal-oxide-semiconductor devices S.V. Jagadeesh Chandra, E. Fortunato, R. Martins and C.J. Choi European Materials Research Society (EMRS-2011) Spring meeting May 9-11, 2011 Nice, France.

        •   Effect of annealing environment on the electrical properties of Ge and Si metal-oxide-semiconductor (MOS) devices with HfO2/Pt gate stacksS.V. Jagadeesh Chandra, S. Uthanna and C. J. Choi, Inter. Conf. on Fundamental and Applications of Nanoscience and Technology (ICFANT)-2010 Dec 9-11, 2010 School of Materials Science and Nanotechnology, Jadavpur University, Kolkata, India.

        •   Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stackS.V. Jagadeesh Chandra, and Chel-Jong Choi, IUMRS-International Conference on Electronic Materials (IUMRS-ICEM)-2010 Aug 22-27, 2010, KINTEX Hotel, Seoul, South Korea.

        •    Structural and electrical properties of RF magnetron sputtered tantalum oxide films S.V. Jagadeesh Chandra, D.S. Park, G. Guruva Reddy and Chel Jong Choi, International Conference on Nanoscience and Technology (ICONSAT)-2010 Feb 17-20, 2010, IIT Mumbai, India.

        •    Effect of substrate material on the electrical properties of HfO2 MOS device S.V. Jagadeesh Chandra, Mi-Ra Jeong, K.H. Shim and Chel Jong Choi International Conference on Nano Sence and Nano Technology, GJ-NST 2009 Nov 5–6, 2009 Mokpo National University, South Korea.

        •   Structural and electrical properties of rf reactive magnetron sputtered Ta2O5 films: Effect of substrate temperature S.V. Jagadeesh Chandra, S. Uthanna, K. Sidda Reddy and G. Mohan Rao Materials for Advanced Sensors and Detectors. ICMAT-07 Jun 5-8, (2007) Singapore.

        •    Effect of heat treatment on the structural and optical Properties of rf magnetron sputtered tantalum oxide films S.V. Jagadeesh Chandra, G. Mohan Rao, G. Venkata Rao, A. Klein  and  S.Uthanna Int. Conf. Recent Trends in Nano Sci. Technology (ICRTNT)-2006 Dec 7-9, (2006) Kolkota.

          PAPERS PRESENTED IN NATIONAL CONFERENCES 

          1.   Physical characteristics of dc reactive magnetron sputtered tantalum oxide films& S.V. Jagadeesh Chandra, P. S. Reddy, G. Mohan Rao and S.Uthanna Malaviya National Institute of Technology, Jaipur, PLASMA-06, Dec., 19-22, 2006. 

          2.   Effect of oxygen partial pressure on the optical characteristics of tantalum oxide films grown by dc magnetron sputtering S.V. Jagadeesh Chandra, P. S. Reddy, G. Mohan Rao and S. Uthanna Advances in Mater. Sci., Proc. National Conf. Recent Advances in Mater. Sci.Kurukshetra Univ. Sep. 27-29, 2006

          3.   Effect of oxygen partial pressure on the structural and optical properties of rf magnetron sputtered tantalum oxide filmsS.V. Jagadeesh Chandra, P. Sreedhara Reddy, G. Mohan Rao, and S. Uthanna National Symposium on Instrumentation (NSI-06) Oct. 12-15, 2006 ITM, Gwalior. 

          4.   Deposition of Ta2O5 films by dc magnetron sputtering: Effect of annealing temperature S.V. Jagadeesh Chandra, P. Sreedhara Reddy, G. Mohan Rao and S. Uthanna Nat., Conf. on Smart Materials and Recent Technology (SMART-07) Feb 22-23, (2007) Sri Venkateswara University, Tirupati. 

          5.   Influence of the substrate bias voltage on the electrical and optical properties of magnetron sputtered Ta2O5 filmsS. Uthanna, S.V. Jagadeesh Chandra, M. Chandrasekhar, G. Mohan Rao National Seminar on Recent Advances in Thin Film Technology Oct. 26 - 27 (2007) ITM, Gwalior.  

          6.   Studies on the structural and optical properties of bias magnetron sputtered tantalum oxide Films M. Chandra Sekhar, S.V. Jagadeesh Chandra and  S. Uthanna National Conference on Advanced Materials Devices and Technologies Feb 21-23 (2008) S.V.University, Tirupati. 

          7.   Bias magnetron sputtered Ta2O5 films for capacitor applications M.Chandrasekhar,S.V. Jagadeesh Chandra and S. Uthanna 13th National Seminar on Physics and Technology of sensors University of Pune, Pune, March 3-5, 2008.  


          8.   Structural and electrical characterization of dc magnetron sputtered tantalum oxide films: Influence of oxygen partial pressure S. Uthanna and S.V. Jagadeesh Chandra National Conference on Semiconductor Materials & Technology NC-SMT 2008 Department of Physics, Gurukula Kangri Vishwavidyalaya, Haridwar, October 16-18, 2008

          PROJECT PROPOSALS:

          I would like to develop the collaboration with Portugal with the following introduction of the proposal:

          Now-a-days semiconductor devices are not only playing vital role in the electronics but, smart in the detection of biological and chemical components. The aim of this work is to develop a bio-chemical sensor for the detection of pH concentration, enzymes and deoxyribonucleic acid (DNA) sequences with a structure of Electrolyte-Insulator-Semiconductor Field Effect Transistor (EISFET) is also called Ion Sensitive Field Effect Transistor (ISFET). The comprehensive modeling of the bio-chemical sensor was given followed by the survey on these devices. In this proposal, the physical basics and bio-chemical and environmental applications of these devices are discussed. Starting with the introduction and the operation of ISFET with a correlation of MOSFET, ion-sensitivity of the various oxide surfaces was discussed by double-layer theory and site-binding model. In precise, wide band gap semiconductors like gallium nitride, silicon carbide and diamond show interesting properties with respect to biological sensing devices.

          Apart from the above mentioned project, I would like to establish the collaboration between the Indian Institute and Chonbuk National University, Jeonju, South Korea on germanium (Ge) CMOS technology and Bio-technology.   

          Awards Received / Achievements:

        • Selected as one of the awardees in the tough competition globally for a Scientific Investigator position , conducted by Foundation of Science and Technology (FCT), Portugal in 2011.

        • Procured the place in the 28th Edition of prestigious Marquis Who’s Who in the World contest in 2010.

        • Awarded with a prestigious Post Doctoral Researcher in BK-21, Republic of Korea fellowship, 2009.

        • Invited to attend and present my research work done in 8th International Conference on Thin Film Transistors(ITC-2012), during January 30-31, Gunbenkian, Lisbon, Portugal on Bio-sensors.

        • Invited to attend and present my research work done in a European Union Conference on Bilateral Energy, Nice, France during May 9-13, 2011.

        • Invited to present a paper on my research work-done on Bio-sensors in an International Union on Materials Science, 2012 druing 26-31 August, 2012, Busan, Korea.